SWIR LED

SWIR LED 1000–1650nm — DOWA InGaAs Bare Die · SMD · Array

Name: DOWA SWIR LED (1000–1650nm)
Brand: DOWA Electronics
Availability: InStock

DOWA Electronics operates the world's largest SWIR LED production capacity. Ranging from 1000nm to over 1650nm, InGaAs-based SWIR LEDs penetrate glass, water, alcohol, and lipids — becoming the standard for non-invasive medical diagnostics, gas sensing, and food/agricultural QC.

SPECTRUM

1000 – 1650nm Short-Wave Infrared

DOWA InGaAs 기반 SWIR LED는 세계 최대 생산 능력과 46% 향상된 방사 출력을 자랑합니다. 유리·물·실리콘·알코올·지질을 투과하는 성질로 비침습 의료, 가스 센싱, 식품 품질관리의 표준이 되고 있습니다.

SWIR 데이터시트 요청 DOWA SWIR 공식 사이트

DOWA의 SWIR 데이터시트는 영업 비공개 자료이며, 모델 명시 후 영업일 기준 1일 이내 송부드립니다.

Visible

SWIR

MWIR

200nm1000nm3000nm5000nm+

FEATURES

Key features

46% higher radiant output

At 1300nm, SMD-packaged SWIR LEDs deliver 46% higher radiant power than bare-die equivalents.

World's largest production

DOWA's mass-production infrastructure guarantees stable supply for high-volume demand.

Multiple packages

Bare die, 3mm/5mm SMD, die arrays — choose the form factor that fits your application.

Full-wavelength coverage

1050 · 1200 · 1300 · 1460 · 1550 · 1650nm — precise match to water, lipid, glucose, CO absorption bands.

PRODUCT LINEUP

표준 베어 다이 (350×350 μm)

DOWA 공식 제품. 전 모델 InGaAs 기반 · @20mA 측정 기준 · R&D 사양은 변경될 수 있음

Standard bare chip — 350μm × 350μm

Model	Peak λ	Po @20mA	Vf	Chip size	Application
SECSR	1,040 nm	11.0 mW	1.3 V	350×350 μm	Glucose · Alcohol · Water
SSCSR	1,060 nm	10.4 mW	1.2 V	350×350 μm	Healthcare sensing
SRCSR	1,080 nm	9.8 mW	1.2 V	350×350 μm	Healthcare sensing
SUCSR	1,100 nm	10.4 mW	1.2 V	350×350 μm	General SWIR
SVCSR	1,140 nm	8.0 mW	1.2 V	350×350 μm	Reference channel
E2RF2S	1,200 nm	5.2 mW	1.0 V	350×350 μm	Methane · CH₄ band
E3RF2S	1,300 nm	5.8 mW	1.0 V	350×350 μm	Si-transparent · wafer inspection
E3HF2S	1,350 nm	5.2 mW	0.9 V	350×350 μm	Glucose · alcohol
E4RF2S	1,460 nm	4.5 mW	0.9 V	350×350 μm	Water absorption peak
E5RF2S	1,550 nm	3.7 mW	0.9 V	350×350 μm	Lipid · CO₂ short band
E6RF2S	1,650 nm	2.8 mW	0.8 V	350×350 μm	CO · lipid
E7RF2S	1,720 nm	2.5 mW	0.8 V	350×350 μm	Extended SWIR
E9RF2S	1,900 nm	2.1 mW	0.8 V	350×350 μm	Extended SWIR

HIGH POWER

대형 베어 다이 (1080×1080 μm)

고출력 응용을 위한 1.5A 정격 · 단일 다이로 100~575 mW 출력

Large bare chip — 1080μm × 1080μm @ 1.5A

Model	Peak λ	Po @1.5A	Vf	Chip size	Application
SE09S	1,040 nm	575 mW	1.5 V	1080×1080 μm	High-power illumination
SS09S	1,060 nm	557 mW	1.5 V	1080×1080 μm	High-power illumination
SU09S	1,100 nm	543 mW	1.5 V	1080×1080 μm	Industrial inspection
E3RXBR	1,300 nm	230 mW	1.3 V	1080×1080 μm	Wafer inspection (high-power)
E4RXBR	1,460 nm	162 mW	1.3 V	1080×1080 μm	Moisture imaging
E5RXBR	1,550 nm	140 mW	1.3 V	1080×1080 μm	High-power lipid sensing
E6RXBR	1,650 nm	86 mW	1.2 V	1080×1080 μm	High-power CO/lipid